Shindengen DF10SC6
Schottky Barrier Diodes
ABSOLUTE MAXIMUM RATINGS
(unless otherwise specified : Tc=25℃) Item Storage temperrature Junction temperature Symbol Tstg Tj Conditions Ratings Unit -55 to 150 ℃ 150 ℃ Repetitive peak reverse voltage Repetitive peak surge reverse voltage VRRM VRRSM Pulse width 0.5ms, duty=1/40 60 V 65 V 50Hz sine wave, Resistance load, Rating for each Average forward current IF(AV) diode IF(AV)/2, Tc=132℃ 10 A Surge forward current 50Hz sine wave, Non-repetitive, 1cycle, Peak value, IFSM Tj=25℃ 150 A Repetitive peak surge reverse power PRRSM Pulse width 10µs, Tj=25℃, per diode 330 W ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/7 DF10SC6_Rev.01(2020.01)ELECTRICAL CHARACTERISTICS
(unless otherwise specified : Tc=25℃) Item Symbol Conditions Forward voltage Reverse current Total capacitance Thermal resistance VF IR Ct Rth(j-c) IF=5A, Pulse measurement, per diode VR=60V, Pulse measurement, per diode f=1MHz, VR=10V, per diode Junction to case ※︓See the original Specifications Ratings MIN TYP MAX 0.58 4.5 260 2 Unit V mA pF ℃/W Shindengen Electric Manufacturing Co., Ltd.