BAW101 Overview
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAW 101 at TA = 25 ˚C, unless otherwise specified. Unit V(BR) VF IR 300 1.3 V 150 50 nA µA Pulse generator:.
BAW101 datasheet by Siemens Group.
| Part number | BAW101 |
|---|---|
| Datasheet | BAW101_SiemensSemiconductorGroup.pdf |
| File Size | 61.60 KB |
| Manufacturer | Siemens Group |
| Description | Silicon Switching Diode |
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Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAW 101 at TA = 25 ˚C, unless otherwise specified. Unit V(BR) VF IR 300 1.3 V 150 50 nA µA Pulse generator:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BAW101 | HIGH VOLTAGE SWITCHING DIODE | Central Corp |
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BAW101 | Silicon Switching Diode | Infineon Technologies AG |
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BAW101 | High voltage double diode | NXP |
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BAW101 | DUAL SURFACE MOUNT SWITCHING DIODE | Diodes |
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BAW101 | Silicon Switching Diode Array | Kexin |
View all Siemens Group datasheets
| Part Number | Description |
|---|---|
| BAW100 | Silicon Switching Diode Array |
| BAW56S | Silicon Switching Diode Array |
| BAW78A | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| BAW78A-BAW78D | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| BAW78A-BAW79D | Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
| BAW78B | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| BAW78C | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| BAW78D | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| BAW78M | Silicon Switching Diode (Switching applications High breakdown voltage) |
| BAW79A | Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |