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LD261 Datasheet Gaas-ir-lumineszenzdiode Gaas Infrared Emitter

Manufacturer: Siemens Group

Overview: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position LD 261 2.4 2.1 1.9 1.7 0.5 0.4 2.7 2.5 0.25 0.15 0.7 0.6 0 ... 5 0.4 A A Radiant sensitive area (0.4 x 0.4) 1.4 1.0 Collector (BPX 81) Cathode (LD 261) 2.1 1.5 2.54 mm spacing 3.5 3.0 3.6 3.2 1) Detaching area for tools, flash not true to size. Approx. weight 0.03 g GEO06021 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 40 ...

+ 80 80 5 50 1.6 70 750 650 Einheit Unit °C °C V mA A mW K/W K/W Top;

Tstg Tj VR IF IFSM Ptot RthJA RthJL Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge der Strahlung Wav

Key Features

  • q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Available in bins q Same package as BPX 81.

More Datasheets from Siemens Group

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