Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol W
Features
q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Same package as BPX 80 series.
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
LD 260 LD 262 ... LD 269
7.4 7.0
1.9 1.7
0.5 0.4 2.54 mm spacing
2.7 2.5
0.25 0.15
2.1 1.5 0.4 A
GEO06367
A
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
LD263 Datasheet
