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LD271 - GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Description

Bestellnummer Ordering Code Q62703-Q148 Q62703-Q833 Q62703-Q256 Q62703-Q838 Gehäuse Package 5-mm-LED-Gehäuse (T 1 3/4), graugetöntes EpoxyGießharz, Lötspieße im 2.54-mm-Raster (1/10’’) 5 mm LED package (T 1 3/4), grey colored epoxy resin lens, solder tabs lead spacing 2.54 mm (1/10’’) Symbol Symb

Features

  • q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q High pulse handling capability q long leads q Available in groups q Same package as SFH 300, SFH 203.

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Datasheet Details

Part number LD271
Manufacturer Siemens Group
File Size 41.39 KB
Description GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
Datasheet download datasheet LD271 Datasheet

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LD271 INFRARD EMITTER
LD271H GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 0.6 0.4 9.0 8.2 7.8 7.5 2.54 mm spacing 1.3 1.0 5.9 5.5 1.0 0.7 Cathode Approx. weight 0.5 g Chip position GEX06239 Cathode 29 27 9.0 8.2 spacing 2.54mm 0.4 0.8 1.8 1.2 7.8 7.5 5.9 5.5 0.4 0.6 Area not flat Chip position Approx. weight 0.2 g 4.8 4.2 ø4.8 ø5.1 0.6 0.4 GEO06645 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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