| Part number | LD271HL |
|---|---|
| Datasheet | LD271HL_SiemensSemiconductorGroup.pdf |
| File Size | 41.39 KB |
| Manufacturer | Siemens Group |
| Description | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
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+ 100 100 5 130 3.5 220 330 Einheit Unit °C °C V mA A mW K/W Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Top;.
See all Siemens Group datasheets
| Part Number | Description |
|---|---|
| LD271H | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
| LD271H | INFRARD EMITTER |
| LD271 | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
| LD271 | INFRARD EMITTER |
| LD271L | INFRARD EMITTER |
| LD271L | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
| LD271LH | INFRARD EMITTER |
| LD273 | TWO CHIP INFRARED EMITTER |
| LD274 | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
| LD274-2 | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
