BAR63-04W - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-04- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-02W- Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance)
BAR63-03- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-03W- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-05- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-05W- Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-06- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-06W- Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
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BAR 63 ... W
Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz
3
2 1
VSO05561
BAR 63-04W
BAR 63-05W
BAR 63-06W
Type BAR 63-04W BAR 63-05W BAR 63-06W
Marking Ordering Code G4s G5s G6s Q62702-A1261 Q62702-A1267 Q62702-A1268
Pin Configuration 1 = A1 1 = A1 1 = C1 2 = C2 2 = A2 2 = C2 3 = C1/2 3 = A1/2
Package 3=C1/A2 SOT-323
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S ≤ 105 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient
1)
Symbol
Value 50 100 250 150 - 55 ...+150 - 55 ...