BAS125-04 Datasheet Text
Silicon Schottky Diodes q q q
BAS 125 …
For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125 BAS 125-04 Marking 13 14 Ordering Code Pin Configuration (tape and reel) Q62702-D1316 Q62702-D1321 Package1) SOT-23
BAS 125-05
15
Q62702-D1322
BAS 125-06
16
Q62702-D1323
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
02.96
BAS 125 … q q q
For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125-07 Marking 17 Ordering Code Pin Configuration (tape and reel) Q62702-D1327 Package1) SOT-143
Maximum Ratings per Diode Parameter Reverse voltage Forward current Surge forward current, t ≤ 10 ms Total power dissipation, TS ≤ 25 ˚C 3) Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol VR IF IFSM Ptot Tj Tstg
Values 25 100 500 250 150
- 55 … + 150
Unit V mA mW ˚C
725 565
K/W
1) 2) 3)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 450 mW per package....
