BAS125-04W Datasheet | Siemens Semiconductor Group

BAS 125W Silicon Schottky Diodes Preliminary data - For low-loss, fast-recovery, meter protection, bias isolation and clamping application - Integrated diffused guard ring - Low forward voltage BAS 125-04W BAS 125-04W BAS 125-06W ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Marking Ordering Code Pin Configuration Type BAS 125-04W BAS 125-05W BAS 125-06W BAS 125W Parameter Diode reverse voltage Forward current Surge forward current (t ≤ 10ms) Total Power dissipation 14s 15s 16s 13s Q62702Q62702Q62702Q627021 = A1 1 = A1 1 = C1 1=A Symbol 2 = C2 2 = A2 2 = C2 Package 3=C1/A2 SOT-323 3=C1/C2 SOT-323 3=A1/A2 SOT-323 3=C Values 25 100 500 mW 250 150 - 55 ... + 150 ≤ 310 ≤ 425 ≤ 230 ≤ 265 °C SOT-323 Unit V mA Maximum Ratings VR IF IFSM Ptot Tj Tstg 1) 1) TS ≤ 25 °C Junction temperature Storage temperature Thermal Resistance Junction ambient, BAS125W RthJA RthJA RthJS RthJS K/W Junction ambient, BAS 125-04W...06W Junction - soldering point, BAS125W Junction - soldering point, BAS125-04W...06W 1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm Semiconductor Group 1 Dec-20-1996 BAS 125W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR...