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BAS 16S
Silicon Switching Diode Array • For high-speed switching applications • Internal (galvanic) isolated Diodes in one package Tape loading orientation
4 5 6
2 1
3
VPS05604
Type BAS 16S
Marking Ordering Code Pin Configuration A6s
Package
Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 85 °C Junction temperature Storage temperature Symbol Value 75 85 200 4.5 250 150 65 ...+150 mA A mW °C Unit V
VR VRM IF I FS Ptot Tj T stg
Thermal Resistance Junction - ambient
1)
RthJA RthJS
≤ 530 ≤ 260
K/W K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.
BAS16S Datasheet
