BCX68 Datasheet | Siemens Semiconductor Group

NPN Silicon AF Transistors q q q q q BCX 68 For general AF applications High collector current High current gain Low collector-emitter saturation voltage plementary type: BCX 69 (PNP) Type BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 Marking - CB CC CD Ordering Code (tape and reel) Q62702-C1572 Q62702-C1864 Q62702-C1865 Q62702-C1866 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 20 25 5 1 2 100 200 1 150 - 65 … + 150 Unit V A m A W ˚C 75 20 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group BCX 68 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 m A Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter cutoff current VEB = 5 V DC current gain1) IC = 5 m A, VCE = 10 V IC = 500 m A, VCE = 1 V BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 m A Base-emitter voltage1) IC = 5 m A, VCE = 10 V IC = 1 A, VCE = 1 V AC characteristics Transition frequency IC = 100 m A, VCE = 5 V, f = 20 MHz f T - 100 - MHz VCEsat VBE - - 0.6 - - 1 V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 - - IEB0 h FE 50 85 85 100 160 60 - - - 100 160 250 - - - 375 160 250 375 - 0.5 V - - - - 100 100 10 n A...