BCX68 Datasheet | Zetex Semiconductors

FEATURES - High gain and low saturation voltages PLEMENTARY TYPE - PARTMARKING DETAIL - BCX69 BCX68 - CE BCX68-16 - CC BCX68-25 - CD SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 25 20 5 2 1 1 -65 to +150 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(on) 50 85 60 BCX68-16 100 BCX68-25 160 f T C obo 100 25 h FE MIN. 25 20 5 0.1 10 10 0.5 1.0 TYP. MAX. UNIT V V V µA µA µA V V CONDITIONS. I C =100 µ A I C =10m A I E =100 µ A V CB =25V V CB =25V, T a =150°C V EB =5V I C =1A, I B =100m A- I C =1A, V CE =1V- IC IC IC IC IC MHz p F =5m A, V CE =10V =500m A, V CE =1V =1A, V CE =1V- =500m A, V CE =1V- =500m A, V CE =1V 375 250 250 400 Transition Frequency Output Capacitance I C =100m A, V CE =5V, f=100MHz V CB =10V, f=1MHz - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT449 datasheet. -...