Datasheet Summary
BF 2030W
Silicon N-Channel MOSFET Tetrode Preliminary data
- For low noise, high gain controlled input stages up to 1GHz
- Operating voltage 5V
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code Q62702-F1774
Pin Configuration 1=D 2=S 3 = G1 4 = G2
Package SOT-343
BF 2030W NEs
Maximum Ratings Parameter Drain-source voltage
Symbol
Value 14 40 10 7 200 -55 ...+150 150
Unit V mA V mW °C
VDS ID
±I G1/2SM +VG1SE
Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S = 94 °C Storage temperature Channel temperature
Ptot T stg T ch
Thermal Resistance Channel
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