BF2030W datasheet by Siemens Semiconductor Group (now Infineon).
| Part number | BF2030W |
|---|---|
| Datasheet | BF2030W_SiemensSemiconductorGroup.pdf |
| File Size | 16.45 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon N-Channel MOSFET Tetrode |
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BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V 3 4 2 1 VPS05605 ESD: Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BF2030W | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
|
BF2030 | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
|
BF2030R | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
View all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| BF2030 | Silicon N-Channel MOSFET Tetrode |
| BF2000 | Silicon N Channel MOSFET Tetrode |
| BF2000W | Silicon N Channel MOSFET Tetrode |
| BF2040 | Silicon N-Channel MOSFET Tetrode |
| BF2040W | Silicon N-Channel MOSFET Tetrode |
| BF246 | N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
| BF246A | N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
| BF246B | N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
| BF246C | N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
