BF2030W Datasheet
BF2030W Datasheet (Infineon)
Infineon
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF2030... AG.
istance Parameter Channel - soldering point1) BF2030/ BF2030R BF2030W
Symbol Rthchs
BF2030
*
Value
≤370 ≤280
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage ID = 20.
BF2030W Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensiti.
- Unit V(BR)DS +V(BR)G1SS +V(BR)G2SS +I G1SS +I G2SS 0.3 0.3 V I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 - source breakdown voltage +I G1S = 10 mA, V G2S = 0 V, V DS = 0 V Gate 2 - source breakdown voltage ±I G2S = 10 mA, V G1S = V DS = 0 Gate 1 source current V nA VG1S = 5 V, V G2S = .