• Part: BF569
  • Description: PNP Silicon RF Transistor
  • Category: Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 37.37 KB
Download BF569 Datasheet PDF
Siemens Semiconductor Group
BF569
BF569 is PNP Silicon RF Transistor manufactured by Siemens Semiconductor Group.
PNP Silicon RF Transistor q BF 569 For oscillators, mixers and self-oscillating mixer stages in UHF TV tuners Type BF 569 Marking LHs Ordering Code (tape and reel) Q62702-F869 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA ≤ 25 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA ≤ Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Values 35 40 3 30 5 280 150 - 55 … + 150 Unit V m A m W ˚C K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group BF 569 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 3 m A, VCE = 10 V AC Characteristics Transition frequency IC = 3 m A, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Noise figure IC = 3 m A, VCB = 10 V, f = 800 MHz RS = 60 Ω mon base power gain IC = 3 m A, VCB = 10 V, f = 800 MHz RL = 500 Ω f T Ccb Cce F - - - - 950 0.32 0.15 4.5 - - - - d B MHz p F V(BR) CE0 ICB0 h FE 35 - 20 - - 50 - 100 - V n A - Values typ. max. Unit Gp - 14.8 - Semiconductor Group BF 569 Total power dissipation Ptot = f (TA) Transition frequency f T = f (IC) VCE = 10 V, f = 100...