BF660 Datasheet | Siemens Semiconductor Group

PNP Silicon RF Transistor q BF 660 For VHF oscillator applications Type BF 660 Marking LEs Ordering Code (tape and reel) Q62702-F982 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Emitter current Total power dissipation, TA ≤ 25 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA ≤ Symbol VCE0 VCB0 VEB0 IC IE Ptot Tj Tstg Values 30 40 4 25 30 280 150 - 65 … + 150 Unit V m A m W ˚C K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group BF 660 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 3 m A, VCE = 10 V AC Characteristics Transition frequency IC = 5 m A, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz f T Ccb Cce - - - 700 0.6 0.28 - - - MHz p F V(BR) CE0 V(BR) CB0 V(BR) EB0 ICB0 h FE 30 40 4 - 30 - - - - - - - - 50 - n A - V Values typ. max. Unit Semiconductor Group BF 660 Total power dissipation Ptot = f (TA) Transition frequency f T = f (IC) VCE = 10 V, f = 100...