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PNP Silicon RF Transistor
q
BF 660
For VHF oscillator applications
Type BF 660
Marking LEs
Ordering Code (tape and reel) Q62702-F982
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Emitter current Total power dissipation, TA ≤ 25 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA
≤
Symbol VCE0 VCB0 VEB0 IC IE Ptot Tj Tstg
Values 30 40 4 25 30 280 150 – 65 … + 150
Unit V
mA mW ˚C
450
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BF 660
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
BF660 Datasheet
