BF660W datasheet by Siemens Semiconductor Group (now Infineon).
| Part number | BF660W |
|---|---|
| Datasheet | BF660W_SiemensSemiconductorGroup.pdf |
| File Size | 59.42 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | PNP Silicon RF Transistor |
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+ 150 °C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj Tstg TS ≤ 93 °C Junction temperature Storage temperature Junction - soldering point RthJS 205 K/W Semiconductor Group 1 Aug-14-1996 BF 660W at TA = 25°C, unless otherwise specified. DC Characteristics Collector-emitter breakdown voltage Values typ.
View all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| BF660 | PNP Silicon RF Transistor |
