BF660W Datasheet | Siemens Semiconductor Group

BF 660W PNP Silicon RF Transistor - For VHF oscillator applications Type BF 660W Marking Ordering Code LEs Q62702-F1568 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 30 40 4 25 5 m W 280 150 - 65 ... + 150 °C m A Unit V VCEO VCBO VEBO IC IB Ptot Tj Tstg TS ≤ 93 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point Rth JS K/W Semiconductor Group Aug-14-1996 BF 660W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO - V IC = 1 m A, IB = 0 Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IE = 0 Base-emitter breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current ICBO 50 n A 30 - VCB = 20 , IE = 0 DC current gain h FE IC = 3 m A, VCE = 10 V AC Characteristics Transition frequency f...