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BF 660W
PNP Silicon RF Transistor
• For VHF oscillator applications
Type BF 660W
Marking Ordering Code LEs Q62702-F1568
Pin Configuration 1=B 2=E 3=C
Package SOT-323
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 30 40 4 25 5 mW 280 150 - 65 ... + 150 °C mA Unit V
VCEO VCBO VEBO IC IB Ptot Tj Tstg
TS ≤ 93 °C
Junction temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
205
K/W
Semiconductor Group
1
Aug-14-1996
BF 660W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max.
BF660W Datasheet
