BFQ193 Overview
BFQ 193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 7.5 GHz F = 1.3 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! + 150 ≤ 95 °C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 93 °C Junction temperature Ambient temperature Storage temperature Junction - soldering point RthJS K/W Semiconductor Group 1...