BFQ82
BFQ82 is NPN Silicon RF Transistor manufactured by Siemens Semiconductor Group.
NPN Silicon RF Transistor q q q q
BFQ 82
For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 m A. Hermetically sealed ceramic package. f T = 8 GHz F = 1.1 d B at 800 MHz
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 82 Marking 82 Ordering Code (tape and reel) Q62702-F1189 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Peak collector current, f ≥ 10 MHz Base current Peak base current, f ≥ 10 MHz Total power dissipation, TS ≤ 95 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction
- ambient 2) Junction
- case 3)
1) 2)
Symbol VCE0 VCES VCB0 VEB0 IC ICM IB IBM Ptot Tj TA Tstg
Values 12 20 20 2 80 80 10 10 500 175
- 65 … + 175
- 65 … + 175
Unit V m A m W ˚C
Rth JA Rth JS
≤ ≤
240 160
K/W
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.
BFQ 82
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 10 V, IE = 0, TA = 125 ˚C Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 m A, VCE = 8 V IC = 30 m A, VCE = 8 V V(BR)CE0 ICES ICB0
- - IEB0 h FE
- 50 110 120
- 250
- -
- - 0.05 5 1
- 12
- -
- - 100 V
µA
Values typ....
