BSM100GB170DN2 Description
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 1100 W Safe operating area IC = ƒ(VCE) parameter:.
BSM100GB170DN2 Datasheet
| Part number | BSM100GB170DN2 |
|---|---|
| Download | BSM100GB170DN2 Datasheet (PDF) |
| File Size | 130.95 KB |
| Manufacturer | Siemens Semiconductor Group |
| Description | IGBT |
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