• Part: BSM100GB170DN2
  • Description: IGBT
  • Manufacturer: Siemens Semiconductor Group
  • Size: 130.95 KB
Download BSM100GB170DN2 Datasheet PDF
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Datasheet Summary

BSM 100 GB 170 DN2 IGBT Power Module Preliminary data - Half-bridge - Including fast free-wheeling diodes - Package with insulated metal base plate - RG on,min = 15 Ohm Type BSM 100 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V Package HALF-BRIDGE 2 Ordering Code C67070-A2703-A67 1700V 145A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 145 100 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 290 200 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot W + 150 -55 ... + 150 ≤ 0.13 ≤ 0.4 4000 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip...