• Part: BSM100GT120DN2
  • Description: IGBT
  • Manufacturer: Siemens Semiconductor Group
  • Size: 180.15 KB
Download BSM100GT120DN2 Datasheet PDF
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Datasheet Summary

BSM 100 GT 120 DN2 IGBT Power Module Target data sheet - Three single switches - Including fast free-wheeling diodes - Package with insulated metal base plate - Solderable Terminals Type BSM 100 GT 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Package TRIPACK Ordering Code C67070-A2520-A67 1200V 150A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 150 100 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 300 200 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot W + 150 -55 ... + 150 ≤ 0.182 ≤ 0.36 2500 16 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25...