BSM10GD60DN2 Overview
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 36 W Safe operating area IC = ƒ(VCE) parameter:.
BSM10GD60DN2 datasheet by Siemens Semiconductor Group (now Infineon).
| Part number | BSM10GD60DN2 |
|---|---|
| Datasheet | BSM10GD60DN2_SiemensSemiconductorGroup.pdf |
| File Size | 122.39 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | IGBT |
|
|
|
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 36 W Safe operating area IC = ƒ(VCE) parameter:.
View all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| BSM100GAL120DN2 | IGBT |
| BSM100GB120DN2 | IGBT |
| BSM100GB120DN2K | IGBT |
| BSM100GB170DN2 | IGBT |
| BSM100GD120DN2 | IGBT |
| BSM100GT120DN2 | IGBT |
| BSM101AR | IGBT |
| BSM111AR | IGBT |
| BSM121AR | IGBT |
| BSM150GAL120DN2 | IGBT |