BSM10GD60DN2 Datasheet | Siemens Semiconductor Group

BSM 10 GD 60 DN2 IGBT Power Module - Power module - 3-phase full-bridge - Including fast free-wheel diodes - Package with insulated metal base plate Type BSM 10 GD 60 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V 600V 10A Package ECONOPACK 1 Ordering Code C67076-A2508-A67 VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 10 TC = 40 °C Pulsed collector current, tp = 1 ms ICpuls TC = 40 °C Power dissipation per IGBT Ptot W + 125 -55 ... + 150 ≤ 3.5 ≤ 4.5 2500 12 10 F 40 / 125 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg Rth JC Rth JCD Vis - Semiconductor Group Jan-09-1997 BSM 10 GD 60 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 6.5 2.7...