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BSM 10 GD 60 DN2
IGBT Power Module
• Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 10 GD 60 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V
VCE
600V
IC
10A
Package ECONOPACK 1
Ordering Code C67076-A2508-A67
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 10
TC = 40 °C
Pulsed collector current, tp = 1 ms
ICpuls
20
TC = 40 °C
Power dissipation per IGBT
Ptot
35
W + 125 -55 ... + 150 ≤ 3.5 ≤ 4.5 2500 12 10 F 40 / 125 / 56 sec Vac mm K/W °C
TC = 25 °C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.
BSM10GD60DN2 Datasheet
