BSM10GD60DN2 Description
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 36 W Safe operating area IC = ƒ(VCE) parameter:.
BSM10GD60DN2 is IGBT manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| BSM100GAL120DN2 | IGBT |
| BSM100GB120DN2 | IGBT |
| BSM100GB120DN2K | IGBT |
| BSM100GB170DN2 | IGBT |
| BSM100GD120DN2 | IGBT |
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 36 W Safe operating area IC = ƒ(VCE) parameter:.