• Part: BSM400GB60DN2
  • Description: IGBT
  • Manufacturer: Siemens Semiconductor Group
  • Size: 127.06 KB
Download BSM400GB60DN2 Datasheet PDF
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Datasheet Summary

BSM 400 GB 60 DN2 IGBT Power Module Preliminary data - Half-bridge - Including fast free-wheeling diodes - Package with insulated metal base plate Type BSM 400 GB 60 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage 600V 475A Package HALF-BRIDGE 2 Ordering Code C67070-A2120-A67 Symbol Values 600 600 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 475 400 TC = 25 °C TC = 60 °C Pulsed collector current, tp = 1 ms ICpuls 950 800 TC = 25 °C TC = 60 °C Power dissipation per IGBT Ptot W + 150 -40 ... + 125 ≤ 0.09 ≤ 0.18 2500 20 11 F 40 / 125 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature Storage...