BTS770G Datasheet | Siemens Semiconductor Group

Overview Features - - - - Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low RDS ON @ 25 °C: High-side switch: typ.165 mΩ, P-DSO-28-9 Low-side switch: typ. 55 mΩ Very high peak current capability Very low quiescent current Space- and thermal optimized power P-DSO-Package Load and GND-short-circuit-protected Operates up to 40 V Status flag diagnosis Overtemperature shut down with hysteresis Short-circuit detection and diagnosis Open-load detection and diagnosis C-MOS patible inputs Internal clamp diodes Isolated sources for external current sensing Over- and under-voltage detection with hysteresis Ordering Code Q67007-A9254 Package P-DSO-28-9 - - - - - - - - - - - - - Type BTS 770 G Description The BTS 770 G is a Trilith IC contains one double high-side switch and two low-side switches in one P-DSO-28-9 -Package. “Silicon instead of heatsink” bees true The ultra low RDS ON of this device avoids powerdissipation. It saves costs in mechanical construction and mounting and increases the efficiency. The high-side switches are produced in the SIEMENS SMART SIPMOS® technology. It is fully protected and contains the signal conditioning circuitry for diagnosis. (The parable standard high-side product is the BTS 611L1.) Semiconductor Group 1 1999-01-07 BTS 770 G For minimized RDS ON the two low-side switches are produced in the SIEMENS Millifet logic level technology (The parable standard product is the BUZ 101AL). Each drain of these three chips is mounted on separated leadframes (see P-DSO-28-9 pin configuration). The sources of all four power transistors are connected to separate pins. So the BTS 770 G can be used in H-Bridge configuration as well as in any other switch configuration. Moreover, it is possible to add current sense resistors. All these features open a broad range of automotive and industrial applications. Semiconductor Group 1999-01-07 BTS 770 G DL1 GL1 DL1 N.C. DHVS GND GH1 ST...