BUZ171 Datasheet | Siemens Semiconductor Group

BUZ 171 SIPMOS ® Power Transistor - P channel - Enhancement mode - Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 171 -50 V -8 A RDS(on) 0.3 Ω Package TO-220 AB Ordering Code C67078-S1450-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -8 Unit A ID IDpuls -32 TC = 30 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse 70 m J ID = -8 A, VDD = -25 V, RGS = 25 Ω L = 1.1 m H, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 40 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 ≤ 3.1 ≤ 75 E 55 / 150 / 56 °C K/W Semiconductor Group 07/96 BUZ...