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BUZ 171
SIPMOS ® Power Transistor
• P channel • Enhancement mode • Avalanche rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 171
VDS
-50 V
ID
-8 A
RDS(on)
0.3 Ω
Package TO-220 AB
Ordering Code C67078-S1450-A2
Maximum Ratings Parameter Continuous drain current Symbol Values -8 Unit A
ID IDpuls
-32
TC = 30 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
EAS
70
mJ
ID = -8 A, VDD = -25 V, RGS = 25 Ω L = 1.1 mH, Tj = 25 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 40
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 3.
BUZ171 Datasheet
