Datasheet4U Logo Datasheet4U.com

BUZ171 - P-Channel Transistor

📥 Download Datasheet

Datasheet preview – BUZ171

Datasheet Details

Part number BUZ171
Manufacturer TEMIC
File Size 185.92 KB
Description P-Channel Transistor
Datasheet download datasheet BUZ171 Datasheet
Additional preview pages of the BUZ171 datasheet.

📁 Similar Datasheet

  • BUZ171 - Power Transistor (Siemens Semiconductor Group)
  • BUZ17 - Power Transistor (Siemens Semiconductor Group)
  • BUZ172 - Power Transistor (Siemens Semiconductor Group)
  • BUZ172 - P-Channel MOSFET (INCHANGE)
  • BUZ173 - Power Transistor (Siemens Semiconductor Group)
  • BUZ10 - N-Channel Power MOSFET (STMicroelectronics)
  • BUZ10 - Power Transistor (Siemens Semiconductor Group)
  • BUZ10 - N-Channel MOSFET (INCHANGE)
  • BUZ100 - Power Transistor (Siemens Semiconductor Group)
  • BUZ100 - N-Channel MOSFET (INCHANGE)
Other Datasheets by TEMIC

    Full PDF Text Transcription

    Click to expand full text
    TEMIC Siliconix P-Channel Enhancement-Mode Transistor Product Summary V(BR)nSS (V) -50 rnS(on) (Q) 0.40 In (A) -7.0 TO·220AB S o DRAIN connected to TAB BUZ171 GDS Top View D P-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Dram Current Pulsed Drain Current' Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (11t6" from case for 10 sec.) ITc=25'C ITc = 100'C LTC = 25'C ITc = 100'e Symbol VDS VGS ID IDM PD TJ,T,tg TL Limit -50 ±20 -7.0 -4.5 -28 40 16 -55 to 150 300 Unit V A W 'c Thermal Resistance Ratings Parameter Junction-la-Ambient Junction-la-Case Case-to-Sink Notes: a. Pulse width lImited by maximum junction temperature P-36731-Rev.
    Published: |