BUZ272 Datasheet | Siemens Semiconductor Group

BUZ 271 SIPMOS ® Power Transistor - P channel - Enhancement mode - Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 271 -50 V -22 A RDS(on) 0.15 Ω Package TO-220 AB Ordering Code C67078-S1453-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -22 Unit A ID IDpuls -88 TC = 26 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse 200 m J ID = -22 A, VDD = -25 V, RGS = 25 Ω L = 413 µH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 125 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 ≤1 ≤ 75 E 55 / 150 / 56 °C K/W Semiconductor Group 07/96 BUZ...