BUZ20 Datasheet | Siemens Semiconductor Group

BUZ 20 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 20 100 V 13.5 A RDS(on) 0.2 Ω Package TO-220 AB Ordering Code C67078-S1302-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 13.5 Unit A ID IDpuls TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13.5 7.9 mJ ID = 13.5 A, VDD = 25 V, RGS = 25 Ω L = 486 µH, Tj = 25 °C Gate source voltage Power dissipation 59 VGS Ptot ± 20 75 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case...