STMicroelectronics BUZ20
N-Channel MOSFET
APPLICATIONS
● ULTRA FAST SWITCHING● RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST)
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● EASY DRIVE - FOR REDUCED AND COST INDUSTRIAL
APPLICATIONS
:● UNINTERRUPTIBLE POWER SUPPLIES
● MOTOR CONTROLS N - channel enhancement mode POWER MaS field effect transistor. Easy drive and very fast switching times make this POWER MaS transistor ideal for high speed switching applications. Typical applications include UPS, battery chargers, printer hammer drivers, solenoid drivers and motor control. , TO-220 INTERNAL SCHEMATIC DIAGRAM 5
ABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS '0 10M Ptot Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KQ) Gate-source voltage Drain current (continuous) Tc =25°C Drain current (pulsed) Total dissipation at Tc < 25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1)● Introduced in 1988 week 44 June 1988 100 V 100 V ±20 V 12 A 48 A 75 W -55 to 150 °C 150 °C E 55/150/56 1/...