Intersil BUZ20
N-Channel Power MOSFET
FEATURES
● 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power● rDS(ON) = 0.200Ω (BUZ20 field effect transistor designed for applications such as
● SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers and drivers for high power bipolar switching
● Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (12A,
● Linear Transfer Characteristics This type can be operated directly from integrated circuits. 100V,
● High Input Impedance 0.200 Formerly developmental type TA17411.
● Majority Carrier Device Ohm, N● Related Literature Channel Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Power Components to PC Boards” BUZ20 TO-220AB BUZ20 MOSNOTE: When ordering, use the entire part number. FET) Symbol /Author D () /KeyG words (Harris S Semiconductor, NChannel Packaging Power JEDEC TO-220AB MOSSOURCE FET, DRAIN TOGATE 220AB) DRAIN (...