The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Semiconductor
Data Sheet
BUZ20
October 1998 File Number 2254.1
12A, 100V, 0.200 Ohm, N-Channel Power
Features
[ /Title (BUZ20 ) /Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching
• 12A, 100V • rDS(ON) = 0.200Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
(12A, transistors requiring high speed and low gate drive power. 100V, This type can be operated directly from integrated circuits. 0.200 Formerly developmental type TA17411.
BUZ20 Datasheet
