Harris BUZ20
N-Channel Power MOSFET
FEATURES
[ /Title (BUZ20 ) /Subject MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching● 12A, 100V
● rDS(ON) = 0.200Ω
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds (12A, transistors requiring high speed and low gate drive power. 100V, This type can be operated directly from integrated circuits. 0.200 Formerly developmental type TA17411. Ohm, NChannel Ordering Information
● Linear Transfer Characteristics
● High Input Impedance
● Majority Carrier Device
● Related Literature Power MOS- PART NUMBER PACKAGE BUZ20 TO-220AB BRAND BUZ20 - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” FET) NOTE: When ordering, use the entire