| Part number | BUZ205 |
|---|---|
| Datasheet | BUZ205_SiemensSemiconductorGroup.pdf |
| File Size | 338.52 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Power Transistor |
|
|
+ 150 ≤ 1.67 E 55/150/56 W ˚C K/W V Unit A ID ID puls VDS VDGR VGS Ptot Tj , Tstg Rth JC 1) See chapter Package Outlines. Semiconductor Group 508 BUZ 205 at Tj = 25 ˚C, unless otherwise specified. Static characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA Gate threshold voltage VGS = VDS , ID = 1 mA Zero gate voltage drain current Values typ.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BUZ205 | N-Channel MOSFET | INCHANGE |
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| BUZ20 | Power Transistor |
| BUZ201 | Power Transistor |
| BUZ202 | Power Transistor |
| BUZ206 | Power Transistor |
| BUZ21 | Power Transistor |
| BUZ213 | Power Transistor |
| BUZ214 | Power Transistor |
| BUZ215 | Power Transistor |
| BUZ216 | Power Transistor |
| BUZ21L | Power Transistor |
