BUZ205 Description
+ 150 ≤ 1.67 E 55/150/56 W ˚C K/W V Unit A ID ID puls VDS VDGR VGS Ptot Tj , Tstg Rth JC 1) See chapter Package Outlines. Semiconductor Group 508 BUZ 205 at Tj = 25 ˚C, unless otherwise specified. Static characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA Gate threshold voltage VGS = VDS , ID = 1 mA Zero gate voltage drain current Values typ.