BUZ205 Datasheet | Siemens Semiconductor Group

SIPMOS® Power Transistor q N channel q Enhancement mode q FREDFET BUZ 205 Type BUZ 205 400 V 6.0 A RDS (on) 1.0 Ω Package 1) TO-220 AB Ordering Code C67078-A1401-A2 Maximum Ratings Parameter Continuous drain current, TC = 35 ˚C Pulsed drain current, TC = 25 ˚C Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Power dissipation, TC = 25 ˚C Operating and storage temperature range Thermal resistance, chip-case DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values 6.0 24 400 400 ± 20 75 - 55 ... + 150 ≤ 1.67 E 55/150/56 W ˚C K/W - V Unit A ID ID puls VDS VDGR VGS Ptot Tj , Tstg Rth JC 1) See chapter Package Outlines. Semiconductor Group BUZ 205 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 m A Gate threshold voltage VGS = VDS , ID = 1 m A Zero gate voltage drain current Values typ. max. Unit V(BR) DSS VGS (th) IDSS 400 2.1 - 4.0 - 4.0 µA - - 20 100 10 0.9 250 1000 100 1.0 n A Ω VDS = 400 V, VGS = 0 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current IGSS RDS (on) - - VGS = 20 V, VDS = 0 V Drain-source on-resistance VGS = 10 V, ID = 4.0 A Dynamic characteristics Forward transconductance VDS ≥ 2 x ID x RDS(on)max , ID = 4.0 A Input capacitance gfs Ciss Coss Crss - - - - - - - 2.9 1500 120 35 30 40 110...