The BUZ20 is a N-Channel Power MOSFET.
| Part Number | BUZ20 Datasheet |
|---|---|
| Manufacturer | Intersil |
| Overview |
BUZ20
Semiconductor
Data Sheet
October 1998
File Number 2254.1
12A, 100V, 0.200 Ohm, N-Channel Power MOSFET
Features
• 12A, 100V
[ /Title This is an N-Channel enhancement mode silicon gate power.
* 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 0.200Ω (BUZ20 field effect transistor designed for applications such as * SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers and drivers for hig. |
| Part Number | BUZ20 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BUZ 20 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 20 VDS 100 V ID 13.5 A RDS(on) 0.2 Ω Package TO-220 AB Ordering Code C6707. Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 3 0.1 10 10 0.17 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 100 V, VGS = 0 V, Tj = 25 °. |
| Part Number | BUZ20 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Infineon |
| Overview | SIPMOS ® Power Transistor BUZ 20 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 20 100 V 13.5 A 0.2 Ω TO-220 . ameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 100 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 100 V, VGS =. |
| Part Number | BUZ20 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
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BUZ20
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE BUZ20
Voss 100 V
ROS(on)
0.2 Q
10 12 A
• 100 VOLTS - FOR UPS APPLICATIONS • ULTRA FAST SWIT.
humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1)
* Introduced in 1988 week 44 June 1988 100 V 100 V ±20 V 12 A 48 A 75 W -55 to 150 °C 150 °C E 55/150/56 1/4 183 BUZ20 THERMAL DATA Rthj _case Thermal resistance junction-case Rthj _ amb Thermal resistance jun. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| UnikeyIC | 400000 | 100+ : 0.2158 USD 200+ : 0.2122 USD 300+ : 0.2068 USD |
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| Unikeyic (ICkey) | 400000 | 100+ : 0.2158 USD 200+ : 0.2122 USD 300+ : 0.2068 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BUZ201 | Siemens Semiconductor Group | Power Transistor |
| BUZ202 | Siemens Semiconductor Group | Power Transistor |
| BUZ205 | Siemens Semiconductor Group | Power Transistor |
| BUZ202 | Inchange Semiconductor | N-Channel MOSFET |
| BUZ206 | Siemens Semiconductor Group | Power Transistor |
| BUZ20 | Harris | N-Channel Power MOSFET |
| BUZ201 | Inchange Semiconductor | N-Channel MOSFET |