BUZ20 Datasheet | Intersil

Semiconductor Data Sheet October 1998 File Number 2254.1 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET Features - 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power - rDS(ON) = 0.200Ω (BUZ20 field effect transistor designed for applications such as - SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers and drivers for high power bipolar switching - Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (12A, - Linear Transfer Characteristics This type can be operated directly from integrated circuits. 100V, - High Input Impedance 0.200 Formerly developmental...