BUZ346S2 Datasheet | Siemens Semiconductor Group

BUZ 346 S2 Not for new design SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 346 S2 60 V 58 A RDS(on) 0.018 Ω Package TO-218 AA Ordering Code C67078-S3120-A4 Maximum Ratings Parameter Continuous drain current Symbol Values 58 Unit A ID IDpuls TC = 73 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 58 4.5 m J ID = 58 A, VDD = 25 V, RGS = 25 Ω L = 21.4 µH, Tj = 25 °C Gate source voltage Power dissipation 72 VGS Ptot ± 20 170 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 ≤ 0.74 ≤ 75 C 55 / 150 / 56 °C...