BUZ357 Datasheet | Siemens Semiconductor Group

BUZ 357 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 357 1000 V 5.1 A RDS(on) 2Ω Package TO-218 AA Ordering Code C67078-S3110-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 5.1 Unit A ID IDpuls TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 5.1 18 m J ID = 5.1 A, VDD = 50 V, RGS = 25 Ω L = 62 m H, Tj = 25 °C Gate source voltage Power dissipation 850 VGS Ptot ± 20 125 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 ≤1 75 E 55 / 150 / 56 °C K/W 01/97 BUZ...