| Part number | BUZ357 |
|---|---|
| Datasheet | BUZ357_SiemensSemiconductorGroup.pdf |
| File Size | 68.99 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Power Transistor |
|
|
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1 1.5 6.5 5.1 20 V 1.2 µs µC Values typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| BUZ35 | Power Transistor |
| BUZ350 | Power Transistor |
| BUZ351 | Power Transistor |
| BUZ353 | Power Transistor |
| BUZ354 | Power Transistor |
| BUZ355 | Power Transistor |
| BUZ356 | Power Transistor |
| BUZ358 | Power Transistor |
| BUZ305 | Power Transistor |
| BUZ307 | Power Transistor |
