BUZ60B Datasheet | Siemens Semiconductor Group

BUZ60 Semiconductor Data Sheet October 1998 File Number 2260.1 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features - 5.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power - rDS(ON) = 1.000Ω (BUZ60 field effect transistor designed for applications such as - SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Sub- Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject - Linear Transfer Characteristics (5.5A, This type can be operated directly from integrated circuits. - High Input Impedance 400V, Formerly developmental type...