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BUZ60B - Power Transistor

Key Features

  • 5.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power.
  • rDS(ON) = 1.000Ω (BUZ60 field effect transistor designed for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUZ60 Semiconductor Data Sheet October 1998 File Number 2260.1 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 5.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.000Ω (BUZ60 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Sub• Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject • Linear Transfer Characteristics (5.5A, This type can be operated directly from integrated circuits. • High Input Impedance 400V, Formerly developmental type TA17414. • Majority Carrier Device 1.