BUZ81 Datasheet | Siemens Semiconductor Group

BUZ 81 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 81 800 V 4A RDS(on) 2.5 Ω Package TO-220 AB Ordering Code C67078-S1345-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4 Unit A ID IDpuls TC = 48 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 4 13 m J ID = 4 A, VDD = 50 V, RGS = 25 Ω L = 48 m H, Tj = 25 °C Gate source voltage Power dissipation 410 VGS Ptot ± 20 125 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 ≤1 75 E 55 / 150 / 56 °C K/W 07/96 BUZ...