BXY42BA-7 Datasheet | Siemens Semiconductor Group

Silicon PIN Diode q BXY 42BA-7 Fast switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BXY 42BA-7 Marking 27 Ordering Code Q62702-X160 Pin Configuration Package1) Cerec-X Maximum Ratings Parameter Reverse voltage Peak forward current, tp = 1 µs Total power dissipation Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - ambient2) Rth JA ≤ Symbol VR IFRM Ptot Tj Tstg Top Values 50 5 350 175 - 55 … + 150 - 55 … + 150 Unit V A m W ˚C K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. BXY 42BA-7 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 10 µA Reverse current VR = 40 V Storage time IF = 10 m A, VR = 10 V Diode capacitance VR = 20 V, f = 1 MHz Charge carrier life time IF = 10 m A, IR = 6 m A Forward resistance f = 100 MHz, IF = 10 m A Symbol min. V(BR) IR ts CT τL Values typ. - - 4 - 40 1.5 max. - 5 - 0.2 - - 50 - - - - - Unit V n A ns p F ns Ω...