BXY42BA-S Datasheet | Siemens Semiconductor Group

Silicon PIN Diodes BXY 42BA-S BXY 42BB-S Beam lead version q Fast switching q ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BXY 42BA-S BXY 42BB-S Marking - Ordering Code Q62702-X151 Q62702-X159 Pin Configuration Pointed cathode Package1) S Maximum Ratings Parameter Reverse voltage Junction temperature Storage temperature range Operating temperature range Symbol BXY 42BA-S VR Tj Tstg Top 50 175 - 55 … + 150 - 55 … + 150 Values BXY 42BB-S 30 V ˚C Unit 1) For detailed information see chapter Package Outlines. BXY 42BA-S Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 10 µA Forward voltage IF = 50 m A Reverse current VR = 40 V Storage time IF = 10 m A, VR = 10 V Diode capacitance VR = 30 V, f = 1 MHz Charge carrier life time IF = 10 m A, IR = 6 m A Forward resistance f = 100 MHz, IF = 10 m A Symbol min. V(BR) VF IR ts CT τL Values typ. - 1.0 - 3 - 30 1.8 max. - - 5 - 0.08 - - 50 - - - - - - Unit V n A ns p F ns Ω rf BXY 42BA-S Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 10 µA Forward voltage IF = 50 m A Reverse current VR = 20 V Storage time IF = 10 m A, VR = 10 V Diode capacitance VR = 20 V, f = 1 MHz Charge carrier life time IF = 10 m A, IR = 6 m A Forward resistance f = 100 MHz, IF = 10 m A Symbol min. V(BR) VF IR ts CT τL Values typ. - 1.1 - 2 - 20 1.3 max. - - 5 - 0.15 - - 30 - - - - - - Unit V n A ns p F ns Ω...