BYP300 Datasheet | Siemens Semiconductor Group

BYP 300 Preliminary data FRED Diode - Fast recovery epitaxial diode - Soft recovery characteristics Type BYP 300 VRRM 1200V IFRMS 6.5A trr 55ns Package TO-218 AD Ordering Code C67047-A2250-A2 Maximum Ratings Parameter Mean forward current Symbol Values 4 Unit A 6.5 15 IFAV IFRMS IFSM IFRM 40 ∫i2dt 1.1 TC = 90 °C, D = 0.5 RMS forward current Surge forward current, sine halfwave, aperiodic Tj = 100 °C, f = 50 Hz Repetitive peak forward current Tj = 100 °C, tp ≤ 10 µs i 2t value Tj = 100 °C, tp = 10 ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation A2s 1200 1200 W 15 -40 ... + 150 -40 ... + 150 ≤ 3.8 ≤ 46 E 40 / 150 / 56 K/W °C V VRRM VRSM Ptot Tj Tstg Rth JC Rth JA - TC = 90 °C Chip or operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip-ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group BYP 300 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Forward voltage drop Values typ. max. Unit 2.3 2 0.01 0.05 0.15 3 - V IF = 4 A, Tj = 25 °C IF = 4 A, Tj = 100 °C Reverse current - m A VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 100 °C VR = 1200 V, Tj = 150 °C AC Characteristics Reverse recovery...