BYP303 Datasheet | Siemens Semiconductor Group

BYP 303 FRED Diode - Fast recovery epitaxial diode - Soft recovery characteristics Type BYP 303 VRRM 1200V IFRMS 65A trr 140ns Package TO-218 AD Ordering Code C67047-A2253-A2 Maximum Ratings Parameter Mean forward current Symbol Values 40 Unit A 65 170 IFAV IFRMS IFSM IFRM 370 ∫i2dt 145 TC = 90 °C, D = 0.5 RMS forward current Surge forward current, sine halfwave, aperiodic Tj = 100 °C, f = 50 Hz Repetitive peak forward current Tj = 100 °C, tp ≤ 10 µs i 2t value Tj = 100 °C, tp = 10 ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation A2s 1200 1200 W 120 -40 ... + 150 -40 ... + 150 ≤ 0.5 ≤ 46 E 40 / 150 / 56 K/W °C V VRRM VRSM Ptot Tj Tstg Rth JC Rth JA - TC = 90 °C Chip or operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip-ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group BYP 303 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Forward voltage drop Values typ. max. Unit 2 2.2 1.6 1.8 0.01 0.05 0.15 2.8 - V IF = 25 A, Tj = 25 °C IF = 40 A, Tj = 25 °C IF = 25 A, Tj = 100 °C IF = 40 A, Tj = 100 °C Reverse current - m A VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 100 °C VR = 1200 V, Tj = 150 °C AC Characteristics Reverse recovery...