CFY77 - AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)

Product Overview

Siemens Semiconductor Group

Part number	CFY77
Manufacturer	Siemens Semiconductor Group
File Size	27.29 KB
Description	AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
Datasheet	CFY77 Datasheet
Additional preview pages of the CFY77 datasheet.

Very low noise.
Very high gain.
For low noise front end amplifiers up to 20 GHz.
For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 CFY77-10 HG HH Q62702-F1549 Q62702-F1559 MW-4 MW-4 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 51°C) 2) Therm.

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Other Datasheets by Siemens Semiconductor Group

CFY77-08 - AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
CFY77-10 - AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
CFY25 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
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CFY25-23 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

Published: Mar 23, 2005 |