| Part number | HYB3117800BSJ-60 |
|---|---|
| Datasheet | HYB3117800BSJ-60_SiemensSemiconductorGroup.pdf |
| File Size | 260.67 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | 2M x 8 - Bit Dynamic RAM 2k Refresh |
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432 active mW (-50 version) max. 396 active mW (-60 version) max. 360 active mW (-70 version) 7.2 mW standby (LV-TTL) 3.6 mW standby (CMOS) Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, self refresh and test mode Fast page mode capability All inputs, outputs and clocks fully LVTTL-patible 2048 refresh...
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| HYB3117800BSJ-60 | 2M x 8-Bit Dynamic RAM |
| HYB3117800BSJ-50 | 2M x 8-Bit Dynamic RAM |
| HYB3117800BSJ-50 | 2M x 8 - Bit Dynamic RAM 2k Refresh |
| HYB3117800BSJ-70 | 2M x 8-Bit Dynamic RAM |
| HYB3117805BJ-50 | 2M x 8 - Bit Dynamic RAM |
| HYB3117805BJ-60 | 2M x 8 - Bit Dynamic RAM |
| HYB3117805BJ-70 | 2M x 8 - Bit Dynamic RAM |
| HYB3117805BSJ-50 | 2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB3117805BSJ-60 | 2M x 8-Bit Dynamic RAM 2k Refresh |
| HYB3117400BJ-50 | 3.3V 4M x 4-Bit Dynamic RAM |
