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HYB3117800BSJ-70 Datasheet

Manufacturer: Siemens Semiconductor Group (now Infineon)
HYB3117800BSJ-70 datasheet preview

HYB3117800BSJ-70 Details

Part number HYB3117800BSJ-70
Datasheet HYB3117800BSJ-70_SiemensSemiconductorGroup.pdf
File Size 260.67 KB
Manufacturer Siemens Semiconductor Group (now Infineon)
Description 2M x 8-Bit Dynamic RAM
HYB3117800BSJ-70 page 2 HYB3117800BSJ-70 page 3

HYB3117800BSJ-70 Overview

432 active mW (-50 version) max. 396 active mW (-60 version) max. 360 active mW (-70 version) 7.2 mW standby (LV-TTL) 3.6 mW standby (CMOS) Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, self refresh and test mode Fast page mode capability All inputs, outputs and clocks fully LVTTL-patible 2048 refresh...

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