Datasheet4U Logo Datasheet4U.com

HYB314100BJL-70 - 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

Download the HYB314100BJL-70 datasheet PDF. This datasheet also covers the HYB-314 variant, as both devices belong to the same 4m x 1-bit dynamic ram low power 4m x 1-bit dynamic ram family and are provided as variant models within a single manufacturer datasheet.

General Description

3.3 V DRAM (access time 50 ns) 3.3 V DRAM (access time 60 ns) 3.3 V DRAM (access time 70 ns) 3.3 V Low Power DRAM (access time 50 ns) 3.3 V Low Power DRAM (access time 60 ns) 3.3 V Low Power DRAM (access time 70 ns) Semiconductor Group 2 HYB 314100BJ/BJL-50/-60/-70 3.3V 4M x 1 DRAM Pin Configur

Key Features

  • include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families. Ordering Information Type HYB 314100BJ-50 HYB 314100BJ-60 HYB 314100BJ-70 HYB 314100BJL-50 HYB 314100BJL-60 HYB 314100BJL-70 Ordering Code Q67100-Q2035 Q67100-Q2037 Q67100-Q2039 on request on request on request Package P-SOJ-26/20-5 P-SOJ-26/20-5 P-SOJ-26/20-5 P-SOJ-26/20-5 P-SOJ-26/20-5 P-SOJ-26/20-5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYB-314-100.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for HYB314100BJL-70 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYB314100BJL-70. For precise diagrams, and layout, please refer to the original PDF.

4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information • • • • 4 194 304 words by 1-bit organization 0 to 70 ˚C operati...

View more extracted text
ation • • • • 4 194 304 words by 1-bit organization 0 to 70 ˚C operating temperature Fast Page Mode Operation Performance: -50 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns tRAC tCAC tAA tRC tPC • RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 95 35 Single + 3.3 V (± 0.3 V ) supply with a built-in Vbb generator • Low power dissipation max. 252 mW active (-50 version) max. 216 mW active (-60 version) max. 198 mW active (-70 version) • Standby power dissipation: 7.2 mW max. standby (TTL) 3.6 mW max. standby (CMOS) 720 µW max.

More Datasheets from Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB314100BJL-50 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJL-60 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJ-50 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJ-60 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJ-70 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJBJL-50- 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314171BJ-50 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-60 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-70 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJL-50 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh