PC66-222-920 Datasheet | Siemens Semiconductor Group

3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 - 168 Pin PC100 and PC66 patible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation Optimized for byte-write non-parity or ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout patible to INTEL’ s Rev. 1.0 module specification SDRAM Performance: -8 f CK t AC Clock frequency (max.) Clock access time 100 6 -8-3 100 6 -10 66 8 Units MHz ns - - - - - - Programmed Latencies : Product Speed -8 -8-3 -10 PC100 PC100 PC66 CL 2 3 2 t RCD 2 2 2 t RP 2 3 2 - - Single +3.3V(± 0.3V ) power supply Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave) Auto Refresh (CBR) and Self Refresh Decoupling capacitors mounted on substrate All inputs, outputs are LVTTL patible Serial Presence Detect with E 2PROM Utilizes 2M x 8 SDRAMs in TSOPII-44 packages 4096 refresh cycles every 64 ms 133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads - - - - - - - Semiconductor Group HYS64(72)V2200/4220GU-8/-10 SDRAM-Modules The HYS64(72)2200 and HYS64(72)4220 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised as 2M x 64, 2M x 72 in 1 bank and 4M x 64 and 4M x 72 in two banks high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 speed sort 2M x 8 SDRAM devices in TSOP44 packages to meet the PC100 requirement. Modules which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’ s PC SDRAM Rev.1.0 module specification. The DIMMs have a serial presence detect, implemented with a serial E 2PROM using the two pin I2C protocol. The first 128 bytes are utilized by the DIMM...