Q60215-Y1112 Description
+ 125 260 Einheit Unit °C °C Top; Fotoempfindlichkeit Wavelength of max.
Q60215-Y1112 is NPN-Silizium-Fototransistor Silicon NPN Phototransistor manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| Q60215-Y111-S4 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y111-S5 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y1111 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y1113 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y62 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
+ 125 260 Einheit Unit °C °C Top; Fotoempfindlichkeit Wavelength of max.