| Part number | Q627002G0078 |
|---|---|
| Datasheet | Q627002G0078_SiemensSemiconductorGroup.pdf |
| File Size | 247.98 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) |
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CGY 81 GaAs MMIC l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match ESD:.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62701-F51 | PNP GERMANIUM RF TRANSISTOR |
| Q62701-F72 | PNP GERMANIUM RF TRANSISTOR |
| Q62701-F88 | PNP GERMANIUM RHF TRANSISTOR |
| Q62701-F92 | PNP GERMANIUM UHF TRANSISTOR |
| Q62702-A0042 | Silicon Crossover Ring Quad Schottky Diode |
| Q62702-A0043 | Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A0062 | Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
| Q62702-A0960 | Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
| Q62702-A1004 | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
