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Q62702-A0042 Datasheet

Manufacturer: Siemens Semiconductor Group (now Infineon)
Q62702-A0042 datasheet preview

Datasheet Details

Part number Q62702-A0042
Datasheet Q62702-A0042_SiemensSemiconductorGroup.pdf
File Size 46.76 KB
Manufacturer Siemens Semiconductor Group (now Infineon)
Description Silicon Crossover Ring Quad Schottky Diode
Q62702-A0042 page 2

Q62702-A0042 Overview

Silicon Crossover Ring Quad Schottky Diode q BAT 14-099R Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.

Siemens Semiconductor Group (now Infineon) logo - Manufacturer

More Datasheets from Siemens Semiconductor Group (now Infineon)

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Part Number Description
Q62702-A0043 Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators)
Q62702-A0062 Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type)
Q62702-A0960 Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
Q62702-A1004 Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
Q62702-A1006 Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators)
Q62702-A1010 Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)
Q62702-A1017 Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators)
Q62702-A1025 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Q62702-A1028 Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
Q62702-A1028 Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies)

Q62702-A0042 Distributor

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